IDC51D120T6H edited by infin eon technologies, aim pmd d cid t, l4673a, edition 0.9, 26.06.07 d iode emcon 4 high power c hip this chip is used for: medium / high power modules features: 12 00v emcon 4 t echnology soft, fast switching low reverse recovery charge small temperature coefficient applications: medium / h igh power drives a c chip type v r i f die size package IDC51D120T6H 1200v 100a 7.00 x 7.30 mm 2 sawn on foil mechanical parameter: raster size 7.00 x 7.30 area total / active 51.10 / 39.99 anode pad size 6.046 x 6.346 mm 2 thickness 120 m wafe r size 150 mm flat position 180 deg max. possible chips per wafer 277 pcs passivation frontside p hotoimide pad metall 3200 nm al si cu backside metall ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue o r solder wire bond al, 500m reject ink d ot s ize ? 0.65mm; max 1.2mm recommended s torage e nvironment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
IDC51D120T6H edited by infin eon technologies, aim pmd d cid t, l4673a, edition 0.9, 26.06.07 maximum ratings parameter symbol condition value unit r epetitive peak reverse voltage v rrm 1200 v continuous forward current limited by t jmax i f 1 ) maximum repetitive forward current limited by t jmax i frm 200 a maximum junction and storage temperature t vj,max , t stg - 40 ...+175 c reverse bias safe o perating area 2) (rbsoa) i f,max = 2 00a, v r,max = 12 00v, t vj,op 150 c , p max = tbd kw 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation static electrical characteristics (tested on wa fer ) , t j =25 c value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =12 00v t j =25 c 18 a cathode - anode breakdown voltage v br i r =0. 2 5 ma t j =25c 12 00 v forward voltage drop v f i f =1 0 0a t j =25 c 1.55 1. 9 2.25 v dynamic electrical characteristics i nductive l oad ( not subject to production test - verified by design/characterization ) value 2) parameter symbol conditions min. typ. max. unit peak reverse recovery current i r m i f =a di/dt=a/ m s v r =v v ge = - 15 v t j = 25 c t j = 125 c t j = 150 c tbd a reverse recovery charge q r i f =a di/dt=a/ m s v r =v v ge = - 15 v t j = 25 c t j = 125 c t j = 150 c tbd c reverse recovery energy e rec i f =a di/dt=a/ m s v r =v v ge = - 15 v t j = 25 c t j = 125 c t j = 150 c tbd mj 2) values also influenced by parasitic l - and c - in measurement and package.
IDC51D120T6H edited by infin eon technologies, aim pmd d cid t, l4673a, edition 0.9, 26.06.07 chip drawing:
IDC51D120T6H edited by infin eon technologies, aim pmd d cid t, l4673a, edition 0.9, 26.06.07 further electrical characteristics: this chip data sheet refers to the device data sheet tbd description: aql 0,65 for visual inspection accor ding to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved attention plea se! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact y our nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question ple ase contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expect ed to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustai n and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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